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According to millman and taub pulse digital and switching waveforms mcgraw hill 1965 the cutin or offset break point or threshold voltage for a silicon diode is 06 and 02 for germanium. Silicon diodes are rated around 7 volts.

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However the voltage for the 1n34a diode is measured with a current around 10ma.

Germanium diode voltage threshold. Exceptions to this rule are a special group of silicon schottky diodes with lower threshold voltage. Crystal radio receivers depend on the 1n34a germanium diodes rated forward voltage drop the amount of voltage before is starts to conduct of 3 volts. This is called forward current.
Silicon diodes require more voltage to conduct current. The value is different for other diode typesschottky diodes can be rated as low as 02 v germanium diodes 025 to 03 v and red or blue light emitting diodes leds can have values of 14 v and 40 v respectively. A germanium diode typically begins to conduct an electric current when voltage properly applied across the diode reaches 03 volts.
The general rule of thumb is that silicon diodes have a threshold voltage of approximately 07 v or more whilst the germanium diodes are approximately 03 v or less. Though germanium diodes are better in the area of forward voltage drop silicon diodes are cheaper to produce and have higher breakdown voltages and current capabilities. A silicon diode has a voltage drop of approximately 07v while a germanium diode has a voltage drop of approximately 03v.
Silicon diodes require more voltage to conduct current. Germanium diodes have a much lower threshold voltage than silicon diodes. A germanium diode typically begins to conduct electric current when voltage properly applied across the diode reaches 03 volts.
Without the threshold voltage being reached the diode cannot conduct current. It takes 07 volts to create a forward bias situation in a silicon diode. The threshold voltage is the voltage required for the diode to conduct current across from its anode to its cathode.
It takes 07 volts to create a forward bias situation in a silicon diode. A silicon diode has a voltage drop of approximately 07v while a germanium diode has a voltage drop of approximately 03v.

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